| abstract |
A film structure includes dielectric films with low dielectric constant and films as a source for N-H bases, such as barrier layer films, etching barrier films and hard mask films. Between the dielectric film with low dielectric constant and the neighboring film with N-H bases, a TEOS oxide film is inserted, which suppresses the diffusion of amines or other N-H bases from the N-H base source film into the dielectric film with low dielectric constant. The film structure can be patterned using DUV lithography and a chemically enhanced photoresist because there are no base groups in the low dielectric constant dielectric films that neutralize the acid catalysts in the chemically enhanced photoresist. |