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filingDate 2002-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2007-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-10258787-B4
titleOfInvention Method for producing a self-aligned floating gate in a flash memory cell
abstract A method of fabricating a self-aligned, floating gate in a flash memory cell, comprising the steps of: - forming a trench (16) in a semiconductor substrate (10); - forming a trench isolation film (24) having a first protrusion in the trench (16), the first protrusion having a first width (W1) and a first height (H1); - Producing a cover layer (26) on the entire structure; Forming a second, smaller protrusion in the trench isolation film (24) by etching the cover layer (26) and a portion of the first protrusion, the second protrusion having a second width (W2) and a second height (H2), the second width (W2) is smaller than the first width (W1) and the second height (H2) is smaller than the first height (H1); and - Producing a floating gate (30), which is isolated by the second projection of the Grabenisolierfilms (24).
priorityDate 2001-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 31.