| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7916a7ad78e21a7985b8068332cca521 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate |
2002-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2d90d08126e2a13a2c4edbc0f49aeec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24d02eb44e8a224847b2eaaa82001620
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aafde2a5f52ba25736cf4706ab2a9038 |
| publicationDate |
2004-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10253855-A1 |
| titleOfInvention |
Insulation layer material for integrated circuits in Damascene architecture |
| abstract |
The invention relates to the field of electronics / microelectronics and relates to an insulation layer material such as can be used, for example, as a dielectric between copper conductor tracks. The object of the invention is to provide an insulating layer material for integrated circuits in Damascene architecture, which has k values of <4.0 with an adjustable pore size of <2.0 nm. The object is achieved by an insulation layer material for integrated circuits in Damascene architecture, containing or consisting of molecules which are only occupied by atoms on the surface and which are separated from one another by further molecules or groups of molecules, the further molecules or groups of molecules being at least two Have sites that are connected to the molecules that are only occupied by atoms on the surface via chemical and / or physical interactions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010094562-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7952188-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9117771-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102009001044-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102009001044-A1 |
| priorityDate |
2002-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |