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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
filingDate 2002-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8df6caf3043d2c1e4d8720b0f332744c
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publicationDate 2004-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-10249350-A1
titleOfInvention Device and method for anisotropic plasma etching of a substrate, in particular a silicon body
abstract The invention relates to a method and a device suitable for carrying it out, for anisotropic plasma etching of a substrate (59), in particular a silicon body. The device has a chamber (53) and a plasma source for generating a high-frequency electromagnetic alternating field and a reaction area (20) for generating a plasma with reactive species within the chamber (53), the reactive species being affected by an etching gas and the alternating field a passivating gas that is introduced at the same time, but spatially separated from it. A means (5, 62, 63) is also provided, with which in the reaction area (20) at least one first zone (23, 33, 43) charged with the etching gas and at least one second zone (22, loaded with the passivating gas) 32, 42) can be defined. In addition, the device has a mixing area (21) arranged downstream of the reaction area (20), with which reactive species generated from the etching gas in the first zone (23, 33, 43) and from the in the second zone (22, 32, 42) Passivating gas generated reactive species are mixed together before acting on the substrate (59).
priorityDate 2002-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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