Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-351 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48747 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-85205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-85 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
filingDate |
2002-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e7dca10db6a59e11653ac6f851c9811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebbba8e8f1001d638fc0040169bc51ae |
publicationDate |
2003-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
DE-10227854-A1 |
titleOfInvention |
Semiconductor device and method for its production |
abstract |
The present invention aims to provide a Schottky electrode that enables a predetermined reverse breakdown voltage to be obtained even if a surface condition in the vicinity of a Schottky junction interface changes due to the welding of the contact wire. The Schottky junction semiconductor device includes a first conductivity type semiconductor substrate. A well region of the second conductivity type is formed in the upper surface of the semiconductor substrate. A Schottky electrode is formed on the upper surface of the semiconductor substrate and has a Schottky junction with the semiconductor substrate. A conductive connector is electrically connected to the Schottky electrode and the conductive connector is selectively connected to the Schottky electrode above the well area. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102018204376-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102018204376-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11282805-B2 |
priorityDate |
2001-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |