http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10220897-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-15 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-14 |
| filingDate | 2002-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4d68b5085074a0d9b2d10a98f9af9cd |
| publicationDate | 2002-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-10220897-A1 |
| titleOfInvention | Thin film magnetic memory |
| abstract | In a thin film magnetic memory device, bit lines (BL) and source lines (SL) are precharged to a power supply voltage (VDD) before a data read operation. When data is read, a corresponding bit line (BL) is connected to a data bus (DB). A corresponding source line (SL) is driven to a ground voltage (VSS) only in the selected memory cell column. In the unselected memory cell columns, the bit lines (BL) and the source lines (SL) are kept at the precharge voltage, i.e. H. the power supply voltage (VDD). No charge / discharge current is generated in the bit lines (BL) of the unselected memory cell rows, that is, a charge / discharge current that is not directly related to the data reading activity is not generated, thereby enabling a reduction in the power consumption in the data reading activity. |
| priorityDate | 2001-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.