| abstract |
Semiconductor device with: an SOI substrate, which has a semiconductor substrate (1), an insulation layer (6) formed on a main surface of the semiconductor substrate and a semiconductor layer (7) formed on the insulation layer; a semiconductor element selectively formed on the semiconductor layer; an interlayer insulation film (22, 26, 30) formed on the semiconductor element and the semiconductor layer; a first electrode pad (3, 3a, 3b, 3c) formed on a main surface of the interlayer insulation film and electrically connected to the semiconductor element; a first contact bump (5a, 5b, 5c) formed on the first electrode connection point; a selectively formed recess (41, 51) extending from the main surface of the interlayer insulation film to the main surface of the semiconductor substrate and a second contact bump (5d) formed on the semiconductor substrate defining a bottom surface of the recess. |