patent/DE-102022101059-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102022101059-A1

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31da94917d1067c89f7e22444c88a836
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6625
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-735
filingDate	2022-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5b1910bdb9d344a6abd4b6e25fe2681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_311cc9f54c966b6ae60efc5e8ee086df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_492a3595532c92b9ea71afffe1e132e1
publicationDate	2022-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	DE-102022101059-A1
titleOfInvention	Extended shallow trench isolation for very low loss in lateral fin-type bipolar transistor devices
abstract	A lateral bipolar transistor (BJT) device includes: an emitter region, a collector region, and a base region, the base region being disposed between and laterally separating the emitter region and the collector region, the base region comprising an intrinsic base region; and a recess formed in a semiconductor substrate and filled with an insulating material, the recess physically separating a bottom surface of the intrinsic base region from the semiconductor substrate.
priorityDate	2021-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449266279 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15913

Total number of triples: 26.