http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102021208252-A1

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filingDate 2021-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22bf336c8a795ec2c32950559a557bea
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publicationDate 2023-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102021208252-A1
titleOfInvention Power semiconductor component and method for detecting aging damage in a power semiconductor component
abstract Power semiconductor component (100) with a heat sink (101) and three half-bridge modules (102, 103, 104), each of which is arranged on the heat sink (101) with the aid of a connection area (105, 106, 107), characterized in that the power semiconductor component (100) has at least one ultrasonic sensor (108) and at least one MEMS sensor (109), wherein the at least one ultrasonic sensor (108) and the at least one MEMS sensor (109) are arranged on opposite sides of the heat sink (101).
priorityDate 2021-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 21.