| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31da94917d1067c89f7e22444c88a836 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-764 |
| filingDate |
2021-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_152ce3de894750af535330fa41fcfdca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_997158170c5f0b7ce3ce2d01451f60bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baa6ed666d1b88b3c1cc703ed0ba94b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7193b9f75b4124b93ad5c27f0c5c0ef0 |
| publicationDate |
2022-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102021129111-A1 |
| titleOfInvention |
Transistor with air gap below source/drain region in bulk semiconductor substrate |
| abstract |
A transistor includes a bulk semiconductor substrate and a first source/drain region in the bulk semiconductor substrate separated from a second source/drain region in the bulk semiconductor substrate by a channel region. A first air gap is defined in the bulk semiconductor substrate under the first source/drain region and a second air gap is defined in the bulk semiconductor substrate under the second source/drain region. A gate is located over the channel region. A distance between the first air gap and the second air gap is at least equal to a length of the channel area such that the first and second air gaps are not under the channel area. The air gaps can have a rectangular cross-sectional shape. The air gaps reduce the turn-off capacitance of the bulk semiconductor structure to near semiconductor-on-insulator levels without the disadvantages of an air gap under the channel region. |
| priorityDate |
2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |