| abstract |
[344] Transistors that include two-dimensional materials and associated methods and devices are disclosed herein. In some embodiments, a transistor can include a first two-dimensional channel material and a second two-dimensional source/drain (S/D) material in a source/drain (S/D), and the first two-dimensional material and the second two-dimensional material can have different compositions or thicknesses exhibit. In some embodiments, a transistor may include a first two-dimensional material in a channel and a second two-dimensional material in a source/drain (S/D), where the first two-dimensional material is a single crystal material and the second two-dimensional material is a single crystal material. |