| abstract |
A method comprises the following: providing a structure with a front side and a rear side, wherein the structure comprises a substrate, two or more semiconductor channel layers arranged above the substrate, which have a first source / drain structure element (S / D structure element) and a second S. / D structure element and a gate structure engaging the semiconductor channel layers, the substrate being on the rear side of the structure and the gate structure being on the front side of the structure; Deepening the first S / D structure element to thereby expose a terminal end of one of the semiconductor channel layers; and depositing a dielectric layer on the first S / D structure element and thereby covering the exposed terminal end of the one of the semiconductor channel layers. |