| abstract |
A method consistent with the present disclosure includes picking up a workpiece having a gate structure, a first source/drain (S/D) feature, a second S/D feature, a first dielectric layer over the gate structure, the first S/D feature and the second S/D feature, a first S/D contact over the first S/D feature, a second S/D contact over the second S/D feature comprising a first etch stop layer (ESL) over the first dielectric layer, and a second dielectric layer over the first ESL, forming an S/D contact via through the second dielectric layer and the first ESL to form the first S/ to couple D-contact, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure, and forming a busbar opening adjacent the gate contact opening to expose the second S/D -Contact, and making a busbar contact in the busbar opening. |