| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-56 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2020-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c680232532baa15dcc2d317e8f50a706
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee656cdfd4e1cfc97b65693288e942d |
| publicationDate |
2021-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102020131427-A1 |
| titleOfInvention |
Photoresist composition and manufacturing method of photoresist structure |
| abstract |
One method of forming a structure in a photoresist layer comprises forming a photoresist layer over a substrate and selectively exposing the photoresist layer to actinic radiation to form a latent structure. The latent structure is developed by applying a developer to the selectively exposed photoresist layer to form a structure. The photoresist layer contains a photoresist composition comprising a photoactive compound and a polymer. The polymer has one or more of iodine or an iodine group attached to the polymer, and the polymer contains one or more monomer units with a crosslinking group, and the monomer units with a crosslinking group are one or more of the following: or the photoresist composition contains a photoactive compound, a polymer containing an iodine or an iodine group, and a crosslinker having two to six crosslinking groups. |
| priorityDate |
2020-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |