| abstract |
Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In one embodiment, a semiconductor device comprises: a substrate, a first transistor over the substrate, the first transistor having a vertical stack of first semiconductor channels, and a first gate dielectric surrounding each of the first semiconductor channels. The first gate dielectric has a first thickness. In one embodiment, the semiconductor device further includes a second transistor over the substrate, the second transistor including a second semiconductor channel. The second semiconductor channel has a pair of side walls and a top surface. In one embodiment, a second gate dielectric is over the pair of sidewalls and the top surface of the fin, the second gate dielectric having a second thickness that is greater than the first thickness. |