| abstract |
In the present invention, a method for planarizing ruthenium metal layers in conductive structures is described. The method includes producing a first conductive structure on a second conductive structure, wherein producing the first conductive structure comprises: producing openings in a dielectric layer arranged on the second conductive structure; and depositing a ruthenium metal in the openings so that it overfills the openings. The production of the first conductive structure further comprises doping the ruthenium metal; and polishing the doped ruthenium metal to produce the first conductive structure. |