| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8613
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66727
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2020-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1cb2fc3e56e6e71abc2e55428b7bb68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f42bc5b8d6582f298e2f92dd391b0741
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f6bc691068e82cdff0d19c47d48e85e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee1cba9985812dc465142db2e72d56fd |
| publicationDate |
2022-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102020122264-A1 |
| titleOfInvention |
Mesa contact for MOS controlled power semiconductor device and manufacturing method |
| abstract |
A power semiconductor device (1) comprises: a first load terminal (11) on a first side (110), a second load terminal (12) and, coupled to the first load terminal (11) and the second load terminal (12), a semiconductor body (10) configured to conduct a load current between the first load terminal (11) and the second load terminal (12); a plurality of trenches (14) on the first side, which extend into the semiconductor body (10) along a vertical direction (Z). Each trench (14) has a trench electrode (141) which is insulated from the semiconductor body (10) by a trench insulator (142). Two of the multiple trenches (14) are arranged laterally next to one another and spatially delimit a mesa part (17). A semiconductor source region (101) is located in the mesa part (17). A semiconductor body region (102) is located in the mesa part (17). A contact plug (111) extends into the mesa portion (17) from the first side. The contact plug (111) is: in contact with both the semiconductor source region (101) and the semiconductor body region (102); in contact with the trench insulator (142) of one of the two trenches (14) spatially delimiting the mesa portion (17); and spaced from the trench insulator (142) of the other of the two trenches (14) spatially delimiting the mesa portion (17). |
| priorityDate |
2020-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |