http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020118657-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7804 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-328 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate | 2020-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc8840fa6c2ce4fb005fa3c14cb6f9db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_929fb9172620705f34ad04b96dc8c822 |
| publicationDate | 2022-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102020118657-A1 |
| titleOfInvention | Method of manufacturing a power semiconductor device |
| abstract | A power semiconductor device (1) comprises: a semiconductor body (10) having a drift region (100) of a first conductivity type; a plurality of trenches (14), two adjacent trenches (14) laterally delimiting a mesa (17) of the semiconductor body (10). Each trench (14) extends from a semiconductor body surface (110) along a vertical direction (Z) into the semiconductor body (10) and includes a trench electrode (141) insulated from the semiconductor body (10) by a trench insulator (142), and has a trench width (TW) along a first lateral direction (X) and a trench length (TL) along a second lateral direction (Y) perpendicular to the first lateral direction (X), the trench length being at least that five times the trench width (TW). Furthermore, the device (1) comprises a semiconductor body region (102) of a second conductivity type in the mesa (17); a source region (101) of the first conductivity type in the mesa (17), the source region (101) being disposed over the semiconductor body region (102); an insulating layer (300) over and/or on the source region (101); a contact plug (111) extending at least from a top surface of the insulating layer (300) along the vertical direction (Z) to contact both the source region (101) and the semiconductor body region (102), the contact plug (111) having sidewall portions (1111) and a lower part (1112), both of which form an interface with the semiconductor body (10). The contact plug (111) extends along an entire top width (WM) of the mesa (17) in the first lateral direction (X) into the semiconductor body (10). The source region (101) is contacted by at least one of the sidewall parts (1111) of the contact plug (111). |
| priorityDate | 2020-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.