| abstract |
Integrated circuit structures with source or drain structures with low resistivity are described. In one example, an integrated circuit structure includes a fin including a lower fin portion and an upper fin portion. A gate stack is over the top fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure comprises an epitaxial structure embedded in the fin on the first side of the gate stack. A second source or drain structure comprises an epitaxial structure embedded in the fin on the second side of the gate stack. Each epitaxial structure of the first and second source or drain structure comprises silicon, germanium and boron. The first and second source or drain structure have a resistivity less than or equal to 0.3 mOhm ยท cm. |