| abstract |
Integrated circuit structures are described which have source or drain structures and germanium N-channels. In one example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion, the upper fin portion including germanium. A gate stack is located over the top fin portion of the fin. A first source or drain structure has an epitaxial structure which is embedded in the fin on a first side of the gate stack. A second source or drain structure has an epitaxial structure which is embedded in the fin on a second side of the gate stack. Each epitaxial structure has a first semiconductor layer in contact with the top fin portion and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes silicon, germanium and phosphorus, and the second semiconductor layer includes silicon and phosphorus. |