| abstract |
Embodiments herein describe techniques for a semiconductor device over a semiconductor substrate. A first bond layer is over the semiconductor substrate. One or more nanowires are formed over the first bond layer to be a channel layer. A gate electrode is around a nanowire, the gate electrode being in contact with the first bond layer and being separated from the nanowire by a gate dielectric layer. A source electrode or a drain electrode is in contact with the nanowire, over a bond area of a second bond layer and separated from the gate electrode by a spacer, the second bond layer over and in direct contact with the first bond layer. Other exemplary embodiments can be described and / or claimed. |