http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102019129789-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6635a0116bafd2c08a0c99b78e132e99 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2019-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_069493ee84a527e7c79213117f4ac871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecf951e88b1f10683b0637e33b421d0c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43a8c7404edcfbf0dad2ef51cbcd9b08 |
| publicationDate | 2021-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102019129789-A1 |
| titleOfInvention | Process for depositing a two-dimensional layer and CVD reactor |
| abstract | The invention relates to a method and a device for depositing a two-dimensional layer on a substrate (4) in a CVD reactor (1), in which a process gas is fed into a gas distribution chamber (11, 21) of a gas inlet element by means of a feed line (10, 20) (2) is fed, which has gas outlet openings (14, 24) which open into a process chamber (3) in which the process gas or decomposition products of the process gas in the process chamber (3) are brought to a surface of a substrate (4), and in which the substrate (4) is brought to a process temperature (T P ) by means of a heating device (6), so that the process gas in the process chamber reacts chemically in such a way that the two-dimensional layer is deposited on the surface. For the separation of heterostructures, it is proposed that the gas inlet element (2) have at least two separate gas distribution chambers (11, 21), each of which is fed with a supply line (10, 20) with different gases or gas mixtures, which simultaneously come from the different , in each case one of the gas distribution chambers (11, 21) associated with gas outlet openings (14, 24) emerge. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020122677-A1 |
| priorityDate | 2019-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.