| abstract |
Embodiments herein describe techniques, systems, and methods for a semiconductor device. Embodiments herein may represent a semiconductor device having a channel region that includes a channel HI-V material and a source region that includes a first portion and a second portion of the source region. The first section of the source region comprises a first III-V material and the second section of the source region comprises a second III-V material. The channel III-V material, the first III-V material and the second III-V material can have the same lattice constant. Furthermore, the first III-V material has a first band gap, and the second III-V material has a second band gap, the channel III-V material has a channel III-V material band gap, wherein the channel material bandgap, the second bandgap, and the first bandgap form a monotonous sequence of bandgaps. Other exemplary embodiments can be described and / or claimed. |