| abstract |
Embodiments herein describe techniques, systems, and methods for a semiconductor device. A semiconductor device may include isolation areas over a substrate to form a trench between the isolation areas. A first buffer layer is over the substrate, in contact with the substrate, and within the trench. A second buffer layer is within the trench over the first buffer layer and in contact with the first buffer layer. A channel region is over the first buffer layer, over a portion of the second buffer layer that is below a source region or a drain region, and without being vertically over a portion of the second buffer layer. In addition, the source region or the drain region is above the second buffer layer, in contact with the second buffer layer, and adjacent to the channel region. Other exemplary embodiments can be described and / or claimed. |