| abstract |
In one embodiment, a method includes the steps of: manufacturing a fin that extends from a substrate, the fin having a first width and a first height after manufacturing; Fabricating a dummy gate stack over a channel region of the fin; Growing an epitaxial source / drain in the fin adjacent to the channel region; and after the epitaxial source / drain is grown, the dummy gate stack is replaced by a metal gate stack, the channel region of the fin having the first width and the first height before the replacement and having a second width and a second height after the replacement, wherein the second width is less than the first width and the second height is less than the first height. |