http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102019103899-A1

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filingDate 2019-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102019103899-A1
titleOfInvention Power semiconductor component and method for processing a power semiconductor component
abstract A power semiconductor component (1) comprises a semiconductor body (10) and has an active region (16) and an edge termination region (17), the semiconductor body (10) within the active region (16) comprising a drift region of a first conductivity type, and wherein the edge termination region (17) comprises: a protective region (107) of a second conductivity type, the protective region (107) being contained in the semiconductor body (10) on a front side (10-1) of the semiconductor body (10) and the active region ( 16) surrounds; and a field plate trench structure (172) which extends from the front side (10-1) vertically into the semiconductor body (10) and is at least partially filled with a conductive material (173), the conductive material (173) with the protected area (107 ) is electrically connected and is isolated outside the protected area (107) by a field plate insulation structure (1725) from the semiconductor body (10), a first part (1721) of the field plate trench structure (172) at least partially extending into the protected area (107) and at least is partially arranged under a metal layer (174) arranged on the front side (10-1); and a second part (1722) of the field plate trench structure (172) extends outside the protected area (107) and completely surrounds the active region (16), the metal layer (174) not extending over the second part (1722) of the field plate trench structure (172) extends.
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