| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9cd24cbd012a998ff2f1ea72d5161f3b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7396
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66727
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7393
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate |
2019-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d047ebc784ae423dc368bef2b50e750b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b487492c38d5b5d365a8749387ddf6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_198820a837c72c00d46527ea1cfdf56f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44e72f9893943935d8e998be7e56817e |
| publicationDate |
2020-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102019101304-A1 |
| titleOfInvention |
Power semiconductor device and method for forming a power semiconductor device |
| abstract |
A method for forming a power semiconductor device (1) comprises: providing a semiconductor body (10) with a surface (100); Providing a control electrode (141) which is arranged at least partially on or within the semiconductor body (10) and is configured to control a load current in the semiconductor body (10); Forming a plurality of raised source regions (104) of a first conductivity type in the semiconductor body (10) adjacent to the control electrode (141), the formation of the raised source regions (104) comprising at least the following steps: implanting dopants of the first conductivity type in the semiconductor body (10); Forming a well mask layer (2) on the semiconductor body surface (100), the well mask layer (2) covering at least the regions (104-1) of intended source regions; and removing parts of the semiconductor body (10) that are not covered by the recess mask layer (2) by means of a first etching process around the raised source regions (104) and recessed body regions (1021) adjacent to the raised source regions (104 ), wherein the recessed body regions (1021) are at least partially arranged between the raised source regions (104). The method further includes: forming a dielectric layer (18) on the semiconductor body surface (100); Forming a via mask layer on the dielectric layer (18); Removing portions of the dielectric layer (18) that are not covered by the via mask layer by a second etching process to form a via (185); and filling the contact hole (185) at least partially with a conductive material (111) so that electrical contact is established with at least a portion of the raised source regions (104) and at least a portion of the recessed body regions (1021). |
| priorityDate |
2019-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |