http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102018132236-A1

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filingDate 2018-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102018132236-A1
titleOfInvention Power semiconductor component
abstract A power semiconductor component (1) comprises a semiconductor body (10) with a front side (10-1) and a rear side (10-2), the semiconductor body (10) including: a drift region (100) of a first conductivity type; a field stop region (105) of the first conductivity type, the field stop region (105) being arranged between the drift region (100) and the rear side (10-2) and having dopants of the first conductivity type with a higher dopant concentration than the drift region (100), the Field stop area (105) was created at least partially by means of an implantation of protons through the rear side (10-2); and a first conductivity type emitter setting area (106), the emitter setting area (106) being located between the field stop area (105) and the back (10-2) and having first conductivity type dopants with a higher dopant concentration than the field stop area (105). The field stop region (105) comprises, in a cross section along a vertical direction (Z), which points from the rear (10-2) to the front (10-1), a dopant concentration profile of dopants of the first conductivity type, which has a first local maximum (1051 ) and a first local minimum (1052), the first local minimum (1052) between the first local maximum (1051) and another local maximum (1053, 1055, 1057) of the dopant concentration profile of the field stop region (105) and / or between the first local maximum (1051) and a maximum of a dopant concentration profile of the emitter setting region (106), the dopant concentration at the first local maximum (1051) being at most a factor of three higher than the dopant concentration at the first local Minimum (1052), and wherein the semiconductor body (10) is or comprises a semiconductor substrate with an interstitial oxygen concentration of at least 1E17 cm -3 .
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