http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102018128692-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0753 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-387 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-647 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-367 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-64 |
| filingDate | 2018-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5912b757985b4ae5809e5ea81afbe489 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6b4896f4e8ca86d99eeee0d229185b7 |
| publicationDate | 2020-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102018128692-A1 |
| titleOfInvention | Optoelectronic semiconductor component with first connection areas and optoelectronic device |
| abstract | An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (11) which is suitable for emitting electromagnetic radiation (15). The optoelectronic semiconductor chip (11) has a first semiconductor layer (140) of a first conductivity type, a second semiconductor layer (150) of a second conductivity type, a first and a second current spreading layer (180, 160), a large number of electrical connecting elements (120) and one A large number of first connection areas (125). The first semiconductor layer (140) and the second semiconductor layer (150) form a semiconductor layer stack. The first current spreading layer (180) is arranged on a side of the first semiconductor layer (140) facing away from the second semiconductor layer (150). The first current spreading layer (180) is electrically connected to the first semiconductor layer (140). The plurality of electrical connection elements (120) are suitable for electrically connecting the second semiconductor layer (150) to the second current expansion layer (160). The first connection regions (125) are connected to the first current expansion layer (180) and extend through the second current expansion layer (160). An area coverage of the first connection areas (125) in an area between adjacent parts of the second current expansion layer (160) is greater than 20% of the area coverage of the second current expansion layer (160). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020116871-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021260032-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020200621-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102022200853-A1 |
| priorityDate | 2018-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.