http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102018123930-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0753 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-385 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 |
| filingDate | 2018-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c09acc5c0adfc1ef591c1c5316383d5a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c1050cd3c43b82d78b77069d2cc9f45 |
| publicationDate | 2020-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102018123930-A1 |
| titleOfInvention | Optoelectronic semiconductor chip with first and second contact element and method for producing the optoelectronic semiconductor chip |
| abstract | An optoelectronic semiconductor chip (11) comprises a first semiconductor layer (110) of a first conductivity type, a second semiconductor layer (120) of a second conductivity type, a first and a second current distribution layer (123, 132), and a first and a second contact element (127 , 137). The first and second semiconductor layers (110, 120) form a layer stack. The first current distribution layer (123) is arranged on a side of the first semiconductor layer (140) facing away from the second semiconductor layer (150) and is electrically conductively connected to the first semiconductor layer (110). The second current distribution layer (132) is arranged on the side of the first semiconductor layer (140) facing away from the second semiconductor layer (150) and is electrically conductively connected to the second semiconductor layer (120). The first contact element (127) is connected to the first current distribution layer (123). The second contact element (137) is connected to the second current distribution layer (132). The first or second contact element (127, 137) extends laterally up to at least one side surface (103) of the optoelectronic semiconductor chip (11). |
| priorityDate | 2018-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.