Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
filingDate |
2018-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_098847364f0ec4341f9219776bbb971b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32d810d5750d46c28d8ff412a63f3044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_966649a54fd99d9fe4b7947d42b7b07b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d54c327140771699ecaf5151a2208cc |
publicationDate |
2020-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
DE-102018122862-A1 |
titleOfInvention |
Method for improving topography of dielectric interlayers |
abstract |
Methods for improving the topography of an interlayer dielectric (ILD) layer and resulting integrated circuit devices are disclosed herein. An example method includes forming a first contact etch stop layer having a first thickness over a first region of a wafer, forming a second contact etch stop layer having a second thickness over a second region of the wafer, and forming an ILD layer over the first contact etch stop layer and the second contact etch stop layer. A first topography variation exists between the first area and the second area. The second thickness is different from the first thickness in order to achieve a second topography variation that is less than the first topography variation. The first topography variation can be caused by a height difference between a first gate structure that is arranged over the wafer in the first region and a second gate structure that is arranged over the wafer in the second region. |
priorityDate |
2018-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |