| abstract |
A method includes forming a first gate structure over a substrate, wherein the first gate structure is surrounded by a first dielectric layer; and forming a mask pattern over the first gate structure and over the first dielectric layer, wherein forming the mask pattern comprises selectively forming a first capping layer over an upper surface of the first gate structure; and forming a second dielectric layer around the first capping layer. The method further includes forming a patterned dielectric layer over the mask pattern, the patterned dielectric layer exposing a portion of the mask pattern; removing the exposed portion of the mask pattern and a portion of the first dielectric layer underlying the exposed portion of the mask pattern, thereby forming a recess that exposes a source / drain region adjacent the first gate pattern; and filling the recess with a conductive material. |