| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76202 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42328
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 |
| filingDate |
2018-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af9c153ea0cdd2a3ca8fcc2fc047600b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05a6303b2d62daa1e6210dc70d6d2066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97c5323a971cc4a56c42cba0b898db43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0a9f051847e029ab42e7c3f5cd80109 |
| publicationDate |
2020-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102018122614-A1 |
| titleOfInvention |
Cell boundary structure for embedded storage |
| abstract |
Various embodiments of the present application are directed to an embedded memory boundary structure with a boundary sidewall spacer and associated manufacturing methods. In some embodiments, a separation structure is fabricated in a semiconductor substrate to separate a memory area from a logic area. A memory cell structure is fabricated on the memory area, and a dummy structure is fabricated on the separation structure. A boundary sidewall spacer is made to cover the dummy structure. A dielectric protective layer is made on top of the boundary sidewall spacer. The boundary sidewall spacer and the dielectric protective layer provide a flat boundary sidewall that is not damaged during the production of the logic element structure and thus no high-k etch residue when producing the logic element structure with the HKMG technology (HKMG: high-k metal Gate). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020100603-B3 |
| priorityDate |
2018-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |