| abstract |
Exemplary embodiments relating to the formation of gate structures, for example, for fin field effect transistors (FinFETs) will be described. In an embodiment, a structure includes first and second device regions comprising first and second FinFETs, respectively, on a substrate. A distance between adjacent gate structures of the first FinFETs is smaller than a distance between adjacent gate structures of the second FinFETs. A gate structure of at least one of the first FinFETs has first and second widths on a plane of and below an upper surface of a first fin, respectively. The first width is greater than the second width. A second gate structure of at least one of the second FinFETs has a third and a fourth width on a plane of, respectively, an upper side of a second fin. A difference between the first and second widths is greater than a difference between the third and fourth widths. |