| abstract |
Embodiments described herein generally relate to methods of forming low-k dielectrics and the structures fabricated therefrom. In some embodiments, a dielectric is formed over a semiconductor substrate. The dielectric has a maximum k value of 3.9. The formation of the dielectric involves the use of plasma enhanced chemical vapor deposition (PECVD). The PECVD comprises flowing a diethoxymethylsilane (mDEOS, C 5 H 14 O 2 Si) precursor gas, flowing an oxygen (O 2 ) precursor gas, and flowing a carrier gas. A ratio of a flow rate of the mDEOS precursor gas to a flow rate of the carrier gas is 0.2 or less. |