| abstract |
A method of forming a semiconductor device structure, comprising: forming a first hole (116) and a second hole (118) in a first surface (112) of a substrate (110); forming a first insulating layer (120) in the first hole (116) and in the second hole (118), forming a conductive layer (132, 134) over the first insulating layer (120) and in the first hole (116) and in the second hole (118), the conductive layer forming a first recess (118). 131) in the first hole (116) and fills the second hole (118); forming a second insulating layer (140) over the conductive layer (132, 134) in the first recess (131), the second insulating layer (140) a second recess (142) in the first recess (131), forming a conductive pattern (150) in the second recess (142); andsubstitially removing the substrate (110), the first insulating layer (120), the conductive layer (132, 134), and the second insulating layer (140) from a second surface of the substrate (110) around the conductive structure (150) and the conductive ones Layer (132, 134) in the first hole (116) and in the second hole (118) expose, wherein the second surface (114) of the first surface (112) is opposite. |