http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102017126039-A1

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filingDate 2017-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fafef0d4e4b5e8134914d3aad4dba6c
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publicationDate 2019-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102017126039-A1
titleOfInvention INTEGRATED CIRCUIT DEVICE WITH SOURCE / DRAIN BARRIER
abstract Various examples of an integrated circuit device and a method of forming the device are disclosed herein. In one example, a method includes receiving a workpiece that includes a substrate and a device fin extending over the substrate. The component fin contains a channel region. A portion of the device fin next to the channel region is etched, and the etch creates a source / drain recess and forms a dielectric barrier within the source / drain recess. The workpiece is cleaned so that a lowermost portion of the dielectric barrier remains within a lowermost portion of the source / drain recess. A source / drain structure element is formed within the source / drain recess such that the lowermost portion of the dielectric barrier is disposed between the source / drain structure element and a remainder of the device fin.
priorityDate 2017-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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