| abstract |
A method of making a three-dimensional (3D) integrated circuit (IC), the method comprising: Forming a first sealing ring segment (104a) over a first surface of a first IC die (102a), the first sealing ring segment enclosing a first area on the first surface of the first IC die and having a first bonding surface region, Forming a second sealing ring segment (104b) over a second surface of a second IC die (102b), the second sealing ring segment enclosing a second area on the second surface of the second IC die and having a second bond area region, wherein at least one of the first sealing ring segment and the second sealing ring segment has a sidewall gas vent structure (114), Bonding the first IC die to the second IC die so that the first bond surface region contacts the second bond surface region, thereby creating a sealing ring structure (104) that encloses a gas reservoir (116) between the first surface and the second surface, the sidewall Gas vent structure (114) is configured to allow gas to escape between the gas reservoir and an environment around the 3D IC; and. Performing heat treatment to soften or liquefy material of the first seal ring segment 104a or the second seal ring segment 104b to squeeze the opening and hermetically seal the gas reservoir from the environment. |