| abstract |
A method of forming a power semiconductor device (100) is provided. The method includes: providing a semiconductor wafer (101) grown by a Czochralski process and having a first side (101a); Forming an n-type substrate doping layer (105) in the semiconductor wafer (101) at the first side (101a), the substrate doping layer (105) having a doping concentration of at least 10 / cm, typically at least 10 / cm; and forming an epitaxial layer (19) on the first side (101a) of the semiconductor wafer (101) after forming the substrate doping layer (105). |