| abstract |
A semiconductor device having a fin field effect transistor, FinFET, the FinFET comprising: a rib structure (20) extending in a first direction; a gate structure comprising a gate dielectric layer (30) disposed over the fin structure (20) and a gate electrode layer (240, 250) disposed over the gate dielectric layer (30) and extending in a second direction that crossing the first direction; and sidewall spacers (80) disposed on opposite side surfaces of the gate structure and made of an insulating material, the gate electrode layer (240, 250) being in contact with the sidewall spacers (80) without the gate dielectric layer (30) in the first direction located therebetween, sulfur atoms being located at the interface between the gate electrode layer (240, 250) and the sidewall spacers (80), and wherein the gate electrode layer (240, 250) comprises one or more underlying layers (240) and a main metal electrode layer (250), and the main metal electrode layer (250) is in contact with the sidewall spacers (80) without the one or more underlying layers (240) and the gate dielectric layer (30) lie between them. |