| abstract |
In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) with an active zone (20) for generating laser radiation (L). On opposite main sides of the semiconductor layer sequence (2) there are two electrical connection areas (21, 22). A contact carrier (3) comprises electrical contact surfaces (31, 32) for electrically contacting the semiconductor layer sequence (2). An electrical connecting line (23) extends from the side of the semiconductor layer sequence (2) facing away from the contact carrier (3) to the contact carrier (3). The connecting line (23) is located on or in the semiconductor layer sequence (2). |