abstract |
A method of making molded semiconductor packages (210), the method comprising: Providing a molded semiconductor substrate (200) comprising a molded composite (202) in which semiconductor chips and metal pads (204) are embedded, each metal pad (204) being electrically connected to one of the semiconductor chips and on a first main surface (203 ) the Moldverbund (202) remains uncovered by the Moldverbund (202); Separating the molded semiconductor substrate (200) into individual molded packages (210), each of which comprises one or more of the semiconductor chips and the corresponding metal pads (204), each metal pad (204) having a bottom surface (215), which remains uncovered by the molded composite (202) on the first main surface (203), the metal pads (204) arranged around a periphery of each molded package (210) further having a side surface (214) which is formed by the molded composite (202) remains uncovered at an edge (216) along which the molded packages (210) have been separated; Immersing the molded packages (210) in a chemical bath, causing between 3 to 15 microns of metal to be etched away from the areas of the metal pads (204) that are not covered by the mold compound (202), so that the bottom surface (215) of each metal pad (204) is roughened and burrs from the side surface (214) around the periphery of each molded package (210) arranged metal pads (204) are removed; and Coating the areas of the metal pads (204) that are not covered by the molded composite (202) after the molded packages (210) have been immersed in the chemical bath. |