http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102016117264-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-866 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7396 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate | 2016-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_845174a40aaec4b0c057028ad9af7c00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40fa8185edbcda7779f07e4a325e012e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_971c3139a54f6eb6bf24370411876288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0110024b93be3c7f8d5ea1700c5b53bf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7596ca277bed54b702c0bb734827bf5 |
| publicationDate | 2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102016117264-A1 |
| titleOfInvention | Power semiconductor component with controllability of dU / dt |
| abstract | A power semiconductor component (1) comprises a semiconductor body (10) which is coupled to a first load terminal (11) and a second load terminal (12) of the power semiconductor component (1) and which comprises a drift region (100) which is designed to generate a load current between the terminals (11). 11, 12), the drift region (100) comprising dopants of a first conductivity type; a source region (101) disposed in electrical contact with the first load terminal (11) and comprising dopants of the first conductivity type; a channel region (102) comprising dopants of a second conductivity type and isolating the source region (101) from the drift region (100); at least one power unit cell (1-1) comprising at least one first type trench (14), at least one second type trench (15) and at least one third type trench (16), the trenches (14, 15, 16 ) are arranged laterally adjacent to one another, wherein the trenches (14, 15, 16) each extend into the semiconductor body (10) along an extension direction (Z) and comprise an insulator (142, 152, 162) having a respective trench electrode ( 141, 151, 161) from the semiconductor body (10), and wherein the at least one power unit cell (1-1) further comprises a first mesa zone (17) of the semiconductor body (10), the first mesa zone (17) being laterally of at least the at least one first type trench (14) is limited and comprises at least a respective portion of each of the source region (101), the channel region (102) and the drift region (100). The trench electrode (141) of the at least one first-type trench (14) is electrically coupled to a control terminal (13) of the power semiconductor device and configured to control the load current in the portion of the channel region (102) that is in the first mesa zone (FIG. 17) is included. The trench electrode (151) of the at least one second type trench (15) is electrically connected to the first load terminal (11). The trench electrode (161) of the at least one trench (16) of the third type has a different electrical potential than the trench electrodes (141, 151) of the at least one trench (14) of the first type and the at least one trench (15) of the second Type. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020120679-A1 |
| priorityDate | 2016-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.