| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59c820ad08f8533c7440ae1d9235b168 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-04123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-0828 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-16 |
| filingDate |
2016-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9339d51f3d8f96f29f9424c326086be8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_effc3155a49290777ecf2425377f1b85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2806d6310bd7e3ab679c4b98b896fcb8 |
| publicationDate |
2016-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102016103131-A1 |
| titleOfInvention |
Circuit, semiconductor switching device and method |
| abstract |
In one embodiment, a circuit includes a depletion type high voltage transistor having a first leakage current operatively connected in a cascode configuration to an enhancement type low voltage transistor having a second leakage current. The second leakage current is greater than the first leakage current. |
| priorityDate |
2015-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |