| abstract |
Semiconductor structure comprising: a first device (11) having a first surface (110), the first device comprising: a first active region (112) defined by a first material system, and a second device (12) having a second surface (120), the second surface (120) being coplanar with the first surface (110), the second device comprising: a second active region (122) defined by a second material system, the second material system being different from the first material system, wherein the first device and the second device further comprise a layer (13) of the second material system, and the first surface (110) and the second surface (120) are a top surface of the layer (13) of the second material system, characterized in that the second active region (122) has a side (123) which acts as a boundary between the first device (11) and the second device (12). |