http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102015226708-A1

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filingDate 2015-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddb26c76f7607e2e028c42db4fddaff1
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publicationDate 2017-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102015226708-A1
titleOfInvention Method and device for determining a measure of band gaps in optoelectronic devices
abstract The invention relates to a method for controlling the quality (lateral bandgap and stoichiometric variation) of an optoelectronic device, in particular a CIGS solar module or CIGS solar cell, comprising the following steps: A voltage V greater than zero is applied to a CIGS solar cell (or a CIGS solar module or any interconnection of CIGS solar cells or CIGS solar modules) and the emitted light of the solar cell with a first camera (preferably silicon CCD camera) photographed so as to obtain a first image B1; - to the same CIGS solar cell (or CIGS solar module or any interconnection of CIGS solar cells or CIGS solar modules) at the same positive voltage (or current or illumination) the emitted light of the solar cell with a second camera with different spectral sensitivity as the first camera ( preferably an InGaAs camera or a Si CCD or a camera with a suitable filter) so as to obtain a second image B2; A quotient image Q is calculated from the two images B1 and B2. By means of a suitable calibration, a band gap image (stoichiometric mode) of the CIGS module is calculated from the quotient image Q.
priorityDate 2015-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 26.