| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-096 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate |
2015-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6a749498e49d757d523d6216a4d4d86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c315850583e1c3629fea37f6bee68eb8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af40590ddfef4c49f1920e5cf4582328
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abd08e20deeffb47f2a20cc4972dadbd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_304fc3848d9276d182394fd01feeb23e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02626665d35f81c3e7261cfc75840dce |
| publicationDate |
2017-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102015226157-A1 |
| titleOfInvention |
A semiconductor device and method for forming at least one contact through a semiconductor substrate |
| abstract |
The invention relates to a semiconductor device having at least one remainder (42) of a semiconductor substrate (10) with a substrate side (42b), which has at least one etched metal structure (12, 14) at least through the remainder (42) of the semiconductor substrate (10). extending contact (44), wherein the at least one contact (44) each having a contact core (16) which by means of at least one at least the remainder (42) of the semiconductor substrate (10) extending trench (28) of at least the remainder ( 42) of the semiconductor substrate (10), the substrate side (42b) each having a first etching metal structure (12) per contact (44), which has an interface (16b) of the contact core (16) of the associated contact (44) on the substrate side (42). 42b) and additionally at least one second etching metal structure (14) framing the at least one first etching metal structure (12) than the at least one etching metal structure (12, 14) in and / or on the has at least one trench (28). Likewise, the invention relates to a method for forming at least one contact (44) by a semiconductor substrate (10). |
| priorityDate |
2015-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |