http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102015204315-B4
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7815 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7393 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01K7-01 |
filingDate | 2015-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_036781dafe98b95723c5b7b204c775ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_364d18e7d46bf1c7a27957614462b43a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b40f2e3934778e2d9b47a960c55dcbe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bfafdd022821adbd1e0e0f82b68789e |
publicationDate | 2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-102015204315-B4 |
titleOfInvention | Sensor for a semiconductor device |
abstract | A semiconductor device (1) comprising: - A semiconductor body (10), wherein the semiconductor body (10) includes a semiconductor drift region (103) and the semiconductor drift region (103) dopants of a first conductivity type; a first semiconductor sensor region and a second semiconductor sensor region, each of the first semiconductor sensor region and the second semiconductor sensor region being electrically connected to the semiconductor drift region and having dopants of a second conductivity type other than the first conductivity type; - a first metal contact (11) comprising a first metal material, wherein the first metal contact (11) is in contact with the first semiconductor sensor region (101) and a transition between the first metal contact (11) and the first semiconductor sensor region (101) has a first Metal-semiconductor junction (111) forms; a second metal contact (12) comprising a second metal material other than the first metal material, the second metal contact (12) being separate from the first metal contact (11) and in contact with the second semiconductor sensor region (102) a junction between the second metal contact (12) and the second semiconductor sensor region (102) forms a second metal-semiconductor junction (121) other than the first metal-semiconductor junction (111); - First electrical transmission means (112), wherein the first electrical transmission means (112) are arranged and adapted to a first sensor signal (11-1), which is derived from an electrical parameter of the first metal contact (11) to a first Supplying signal input (21) to a sensor signal processing unit (2); second electrical transmission means (122) separated from said first electrical transmission means (112), said second electrical transmission means (122) being arranged and adapted to receive a second sensor signal (12-1) from an electrical parameter of the second metal contact (12), to a second signal input (22) of the sensor signal processing unit (2) supply. |
priorityDate | 2015-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.