http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102015121722-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R15-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K2217-0027 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7815 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R19-0092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R19-25 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-62 |
| filingDate | 2015-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_507f94706f77541ae1a6cf9003a9de48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_929fb9172620705f34ad04b96dc8c822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77c4cd6193bc37cac5f32530a847c8b3 |
| publicationDate | 2021-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102015121722-B4 |
| titleOfInvention | Current measurement in a power semiconductor component |
| abstract | A semiconductor component (1), comprising a first load connection (11), a second load connection (12) and a semiconductor body (10) which is coupled to the first load connection (11) and the second load connection (12), the semiconductor body (10) is designed to conduct a load current along a load current path between the first load connection (11) and the second load connection (12), the semiconductor component (1) further comprising: - a control electrode (131) which is electrically insulated from the semiconductor body (10) is and is designed to control a part of the load current path; - an electrically floating sensor electrode (132) which is arranged adjacent to the control electrode (131), the sensor electrode (132) from both the semiconductor body (10) and the control electrode ( 131) is electrically isolated and capacitively coupled to the load current path and extends at least as far along a vertical direction (Z) as the control electr rode (131); and a trench (13) which extends into the semiconductor body (10) along the vertical direction (Z), the trench (13) containing both the sensor electrode (132) and the control electrode (131); |
| priorityDate | 2015-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.