| abstract |
A semiconductor device comprises a substrate, at least one first isolation structure, at least two second isolation structures, and an epitaxial structure. The substrate has a plurality of semiconductor fins therein. The first isolation structure is disposed between the semiconductor fins. The semiconductor fins are disposed between the second isolation structures and the second isolation structures extend further into the substrate than the first isolation structure. The epitaxial structure is arranged on the semiconductor fins. At least one cavity is present between the first isolation structure and the epitaxial structure. |